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Idaho Secures $8 Million NSF Grant to Lead Microelectronics Research Initiative

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Idaho wins $8m NSF award to drive microelectronics research

Boise State University Receives $8 Million NSF Grant for Microelectronics Research

Boise State University has recently been awarded a substantial $8 million grant from the National Science Foundation (NSF) to enhance Idaho’s research and development in resilient microelectronics designed for extreme environments.

The initiative, known as the XTREME project, will bring together a consortium consisting of Boise State University, the University of Idaho, three community colleges, Brigham Young University-Idaho (BYU-Idaho), Micron Technology, and Idaho National Laboratory (INL).

One of the primary focuses of the program will be the investigation of material behavior under challenging conditions such as high temperatures, radiation exposure, and mechanical stress.

This NSF award marks Idaho’s first grant under the Established Program to Stimulate Competitive Research (EPSCoR) E-RISE program, and it will facilitate a comprehensive approach to research, workforce development, and jurisdictional capacity in the field of microelectronics. The applications of this research are particularly relevant to sectors such as energy, defense, and aerospace.

Boise State President David Hahn expressed his enthusiasm for the funding, highlighting the university’s long-term commitment to building a regional center for microelectronics research in collaboration with industry and government partners. He emphasized the significance of these funds in establishing a robust research infrastructure that will drive graduate education and lead to critical discoveries in materials essential for national energy and defense systems.

Exploring Microelectronics for Harsh Environments

The XTREME project, which stands for “Capacity Building for Resilient Microelectronics for Extreme Environments,” will concentrate on developing materials capable of withstanding extreme conditions.

Researchers aim to create materials that can enable microelectronics and sensors to function effectively in environments exceeding 1,000°C and in high-radiation settings. The ultimate goal of this research is to generate knowledge that will be instrumental in the development of future energy and defense systems.

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Materials Science and Engineering Professor David Estrada. Credit: Boise State University.

Boise State University and the University of Idaho will spearhead the research efforts, leveraging their existing expertise in materials science and engineering. Boise State has a longstanding partnership with INL spanning two decades, focusing on research, education, and workforce development in microelectronics and related fields.

The collaborative nature of the project will involve the participation of the College of Western Idaho, College of Southern Idaho, and College of Eastern Idaho, in addition to BYU-Idaho, establishing a comprehensive statewide partnership encompassing universities, community colleges, industry, and national laboratory research.

Building on Idaho’s Microelectronics Research Landscape

The NSF grant builds upon previous investments made in Idaho’s microelectronics research ecosystem, with Micron Technology’s significant $25 billion investment in microelectronics fabrication in Boise being a notable component of this initiative.

Micron Technology has also been actively involved in supporting research endeavors at Idaho universities, including the establishment of an endowment that provides ongoing funding for the University of Idaho’s Next Generation Microelectronics Research Center (NGeM).

Boise State University, with the support of the Micron Foundation, established the Micron Center for Materials Research in 2015 through a generous $25 million donation. The university has further enhanced its research capabilities through collaborations with INL and the Department of Energy (DOE) in the realm of advanced sensors and instrumentation.

The XTREME project will build upon these existing initiatives while aligning NGeM with national research priorities in the field.

Training the Next Generation of Microelectronics Experts

Education and workforce development will be central components of the XTREME project, offering students at various academic levels valuable hands-on research opportunities. The participating institutions will collaborate to cultivate skills relevant to microelectronics and related disciplines.

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An advisory board consisting of representatives from NASA, the Air Force Research Laboratory at Wright-Patterson Air Force Base, DOE Nuclear Science User Facilities, industry partners, and R1 universities will provide guidance and expertise throughout the project.

The combined efforts in research and education aim to bolster Idaho’s capabilities in resilient microelectronics while advancing materials research for systems operating in extreme environments.

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